Characteristics of SiC pillar-shaped nanostructure Schottky diode
نویسندگان
چکیده
منابع مشابه
Avalanche robustness of SiC Schottky diode
Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in th...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2009
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3176898